MCMA25PD1200TB phase leg thyristor \ diode module 3 1 2 5 4 part number MCMA25PD1200TB backside: isolated tav t v v 1.2 rrm 25 1200 = v = v i = a 2x features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability direct copper bonded al2o3-ceramic line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control to-240aa industry standard outline rohs compliant soldering pins for pcb mounting base plate: dcb ceramic reduced weight advanced power cycling isolation voltage: v~ 4800 the data contained in this product data sheet is ex clusively intended for technically trained staff. t he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect t o his application. the specifications of our compon ents may not be considered as an assurance of compo nent characteristics. the information in the valid application- and assembly notes must be considered. should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. due to technical requirements our product may conta in dangerous substances. for information on the typ es in question please contact your local sales offi ce. should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. for any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. terms conditions of usage: ixys reserves the right to change limits, condition s and dimensions. 20161222c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCMA25PD1200TB v = v a2s a2s a2s a2s symbol definition ratings typ. max. i v i a v t 1.22 r 1.2 k/w min. 25 v v 100 t = 25c vj t = c vj ma 4 v = v t = 25c vj i = a t v t = c c 85 p tot 90 w t = 25c c 25 1200 forward voltage drop total power dissipation conditions unit 1.47 t = 25c vj 140 v t0 v 0.87 t = c vj 140 r t 13 m ? v 1.20 t = c vj i = a t v 25 1.52 i = a50 i = a50 threshold voltage slope resistance for power loss calculation only a 125 v v 1200 t = 25c vj i a 40 p gm w t = 30 s 10 max. gate power dissipation p t = c c 140 w t = 5 p p gav w 0.5 average gate power dissipation c j 16 junction capacitance v = v400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 140 i2t t = 45c value for fusing t = c 140 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 140 400 430 580 555 aa a a 340 365 800 770 1200 300 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 150 repetitive, i = t vj = 125 c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v = 6 v t = c25 (dv/dt) t = 125c critical rate of rise of voltage a/s 500 v/s t = s; i a; v = ? v r = ; method 1 (linear voltage rise) vj d vj 75 a t pg = 0.45 di /dt a/s; g = 0.45 drm cr v = ? v drm gk 1000 1.5 v t = c -40 vj i gt gate trigger current v = 6 v t = c25 d vj 55 ma t = c -40 vj 1.6 v 80 ma v gd gate non-trigger voltage t = c vj 0.2 v i gd gate non-trigger current 5 ma v = ? v d drm 140 latching current t = c vj 150 ma i l 25 t s p = 10 i a; g = 0.45 di /dt a/s g = 0.45 holding current t = c vj 100 ma i h 25 v = 6 v d r = gk gate controlled delay time t = c vj 2 s t gd 25 i a; g = 0.45 di /dt a/s g = 0.45 v = ? v d drm turn-off time t = c vj 150 s t q di/dt = a/s 10 dv/dt = v/s 20 v = r 100 v; i a; t = 25 v = ? v drm t s p = 200 non-repet., i = 25 a t 125 r thch thermal resistance case to heatsink k/w rectifier 1300 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltag e max. repetitive reverse/forward blocking voltage r/d reverse current, drain current tt r/d r/d 200 0.20 ixys reserves the right to change limits, condition s and dimensions. 20161222c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCMA25PD1200TB ratings c m m a 25 pd 1200 tb part description thyristor (scr) thyristor (up to 1800v) phase leg to-240aa-1b module = = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 4 mounting torque 2.5 t vj c 140 virtual junction temperature -40 weight g 81 symbol definition typ. max. min. conditions operation temperature unit m t nm 4 terminal torque 2.5 v v t = 1 second v t = 1 minute isolation voltage mm mm 13.0 9.7 16.0 16.0 d spp/app creepage distance on surface | striking distance th rough air d spb/apb terminal to backside i rms rms current 60 a per terminal 125 -40 terminal to terminal to-240aa delivery mode quantity code no. ordering number marking on product ordering 50/60 hz, rms; i 1 ma isol MCMA25PD1200TB 515983 box 36 MCMA25PD1200TB standard 4800 isol t stg c 125 storage temperature -40 4000 threshold voltage v 0.87 m ? v 0 max r 0 max slope resistance * 11.8 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 140 c * on die level ixys reserves the right to change limits, condition s and dimensions. 20161222c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCMA25PD1200TB 3 1 2 5 4 outlines to-240aa ixys reserves the right to change limits, condition s and dimensions. 20161222c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
MCMA25PD1200TB 0 40 80 120 160 0 20 40 60 80 0.01 0.10 1.00 10.00 0.1 1.0 10.0 100.0 0.01 0.1 1 100 200 300 4 00 0.5 1.0 1.5 2.0 0 20 40 60 8 0 1 10 100 1000 10000 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 i t [a] t [s] v t [v] 2 3 4 5 6 7 8 9 01 1 10 2 10 3 i 2 t [a 2 s] t [ms] i tsm [a] t vj = 25c t vj = 45c 50 hz, 80% v rrm t vj = 45c v r = 0 v i tavm [a] t case [c] z thjc [k/w] t [ms] fig. 1 forward characteristics fig. 2 surge overload current i tsm : crest value, t: duration fig. 3 i 2 t versus time (1-10 s) fig. 4 gate voltage & gate current fig. 6 max. forward current at case temperature fig. 8 transient thermal impedance junction to case t gd [s] i g [a] lim. typ. fig. 5 gate controlled delay time t gd 0 10 20 30 0 10 20 30 40 50 i t(av) [a] p tot [ w] fig. 7a power dissipation versus direct output current fig. 7b and ambient temperature 0 40 80 120 160 t amb [c] dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 1 10 100 1000 10000 0.1 1 10 v g [v] i g [ma] t vj = 140c t vj = 140c t vj = 125c 140c 1 2 3 4 5 6 1: i gd , t vj = 140c 2: i gt , t vj = 25c 3: i gt , t vj = -40c t vj = 25c 4: p gav = 0.5 w 5: p gm = 5 w 6: p gm = 10 w r thha 0.4 0.6 0.8 1.0 2.0 4.0 i r thi (k/w) t i (s) 1 0.0200 0.0004 2 0.1300 0.0090 3 0.2400 0.0140 4 0.4700 0.0700 5 0.3400 0.4000 thyristor ixys reserves the right to change limits, condition s and dimensions. 20161222c data according to iec 60747and per semiconductor un less otherwise specified ? 2016 ixys all rights reserved
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